4 edition of Defects and diffusion in semiconductors found in the catalog.
by Scitec Publications, Distributed in the Americas by Trans Tech Publications in Switzerland, Enfield, N.H
Written in English
|Other titles||Defects and diffusion in semiconductors V|
|Statement||editor, D.J. Fisher.|
|Series||Diffusion and defect data, Solid state data. Pt. A, Defect and diffusion forum -- v. 210-212 (2002), Diffusion and defect data -- v. 210-212.|
|Contributions||Fisher, D. J.|
|The Physical Object|
|Pagination||vii, 449 p. :|
|Number of Pages||449|
Get this from a library! Defects and diffusion in semiconductors XIII. [D J Fisher;] -- This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes ). As. Get this from a library! Defects and diffusion in semiconductors. XIV.. [Trans Tech Publications.;] -- This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal.
3. Self-diffusion experiments and their theoretical modelling as practical tools to deduce nature and presence of native defects in group IV semiconductors 65 Experimental approach and outcomes 65 Theoretical modelling and outcomes 73 Foreign metal diffusion as an additional method to deduce the nature and properties of defects 75 4. Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects Cited by: 8.
Defects assist the diffusion process, whereas driving forces influence the rate of diffusion depending on the thermodynamics of alloying, diffusion mechanisms, diffusion paths, and defect production. Different types of diffusion are defined based on defects assisting the diffusion process and whether atomic transport occurs in the absence or. Electronic books: Additional Physical Format: Print version: Fisher, D.J. Defects and Diffusion in Semiconductors X: An Annual Retrospective X. Zurich: Trans Tech Publishers, © Material Type: # Semiconductors--Defects\/span>\n \u00A0\u00A0\u00A0\n schema.
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The original works in the present volume concern diffusion phenomena and defects in the two most important semiconductors, with et al's major paper on infra-red experimental studies of oxygen-vacancy related defects that result from the irradiation of silicon, plus shorter theoretical papers on the calculation of Cd diffusion profiles in GaAs (ik), on the enhancement or.
There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.
Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide Defects and diffusion in semiconductors book gallium nitride, ion implantation Format: Hardcover.
The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of.
The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid to mid As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series.
The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Chapter Seven - Surface and Defect States in Semiconductors Investigated by Surface Photovoltage Daniela Cavalcoli, Beatrice Fraboni, Anna Cavallini Pages These defects govern the diffusion processes of dopants in semiconductors.
Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on Cited by: In semiconductors, both neutral and charged point defects serve as diffusion vehicles for self-diffusion and for the diffusion of substitutional impurities.
Point defects also contribute and sometimes dominate electrical properties of the semiconductor: by changing charge states, they are recombination/generation centers of the electric carrier electrons and by: Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November December 1,Boston, Massachusetts, U.S.A.
Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. Haller Frontmatter More information. Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant and impurities.
Diffusion occurs in all thermodynamic phases, but the solid phase is the most important in semiconductors. There are two types of semiconductor solid Author: Derek Shaw. Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas.
This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their : Springer-Verlag Wien. defects, when they replace an intended atom at a lattice position, or interstitial impurities .
Figure 1 provides examples for four of the previously stated defects. Fig 1. Common point defects in semiconductors. Substitutional and interstitial defects involve a separate Area defects are thought of as extended point defects,File Size: 68KB.
Band Tailings and Deep Defects in Semiconductors (Defect and Diffusion Forum, Vol ) [A. Teate, N. Halder] on *FREE* shipping on qualifying offers. Band Tailings and Deep Defects in Semiconductors (Defect and Diffusion Forum, Vol )Authors: A. Teate, N. Halder. Intrinsic Defects in Semiconductors Naturally, point defects are the simplest kinds of defects that can exist within a crystal lattice of which the most elementary example is a vacancy enhanced diffusion.) Generally, the dislocation axis lies in the slip plane.
(Obviously,File Size: KB. Unfortunately, this book can't be printed from the OpenBook. If you need to print pages from this book, we recommend downloading it as a PDF. Visit to get more information about this book, to buy it in print, or to download it as a free PDF.
Get this from a library. Defects and diffusion in semiconductors: an annual retrospective. [D J Fisher;]. Defects and diffusion in semiconductors; an annual retrospective; v Ed. by D.J. Fisher. Trans Tech Publications pages $ Paperback Defect diffusion forum; v QC Developments in semiconductors, metals, ceramics, and miscellaneous material over the past year are reviewed in 15 original papers.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical.
Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium.
This chapter on diffusion in Si starts with an introduction on the significance of diffusion research in semiconductors to determine the properties of atomic defects. Diffusion in solids is treated from a phenomenological and atomistic point of by: 1.Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion.Get this from a library!
Defects and diffusion in semiconductors: an annual retrospective IX. [D J Fisher;] -- This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII .